MSN による配信24 日
「韓国メーカーが日本メーカーを追い落とした時のよう」 中国に ...
HBM（広帯域メモリー）やDDRなど高付加価値・高性能DRAMでも韓国メーカーとの技術格差を狭めているためだ。韓国メーカーは高付加価値製品で収益 ...
中央日報 on MSN4月
「サムスン、場当たり的な対処で5年浪費」…DRAM開発大手術
「30年世界1位」を守ってきたサムスン半導体DRAM開発室が大々的な体質改善に出る。半導体業界によると、サムスン電子の ...
Design-Reuse10 日
Ddr dram IP Listing
The DDR PHY IP supports DDR5/ DDR4/ LPDDR5, provides low latency, and enables up to 5400MT/s throughput. PHY functionality is verified in NC-Verilog simulation software using test bench written ...
Design-Reuse10 日
Generic DDR Behavioural Model
It will be updated bsed on MRW operation and read during MRR operation of DDR. Backdoor access we can provide to the user as DDR has may read only field, which will be configured at the time of ...
Digi Times23 日
DRAM manufacturers reportedly plan to cease DDR3, DDR4 production by late 2025
The DRAM market is shifting as falling prices due ... Faced with weak demand for mature DDR products, Winbond Electronics is advancing its manufacturing by transitioning to a 16nm process in ...
DIGITIMES15 日
Micron begins shipping samples of 1γ DRAM using EUV
According to the official press release Micron Technology announced the shipment of samples of its 1γ, sixth-generation (10nm-class) DRAM-based DDR5 memory to ecosystem partners and select customers.
GitHub9 日
ddrbin_tool_user_guide.txt
0: disable tpl log. * pageclose 1: enable pageclose. 0: disable pageclose. * boot_fsp To choose the which DDR freq to boot system. 0 means fsp0_freq, 1 means fsp1_freq, 2 means fsp2_freq, 3 means fsp3 ...
GitHub7月
boot_init_dram.c
#include "init_dram_tbl_h3.h" #include "init_dram_tbl_m3.h" #include "init_dram_tbl_h3ver2.h" #include "init_dram_tbl_m3n.h" #include "boot_init_dram_regdef.h" # ...
Semiconductor Engineering8 日
Effects Of Reduced Refresh Latency On RowHammer Vulnerability Of DDR4 DRAM Chips
A new technical paper titled “Understanding RowHammer Under Reduced Refresh Latency: Experimental Analysis of Real DRAM Chips ...