To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...

leading to faster and more uniform etching without the regrowth of silicon dioxide (SiO2) layers[1]. This approach addresses a common challenge in 3D NAND fabrication, where oxide regrowth can ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a ...

and a dental porcelain etching gel — against a 300 nm silicon dioxide layer. Etch speed varied widely, from rust remover’s 10 nm/min to glass etching cream’s blazing 240 nm/min — we wonder ...

For example, chlorine-based gases are commonly used for etching silicon, while fluorine-based gases are used for etching silicon dioxide and nitride. Wet etching involves the use of liquid chemical ...

To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be studied in greater detail. By ...

The researchers also studied the impact of phosphorus trifluoride, an essential ingredient when etching silicon dioxide at any significant degree. While it has been used before, the researchers ...