・ケンブリッジ大学のスピンアウト企業がシリーズCの資金調達に成功し、英ケンブリッジ、北米、台湾、欧州における事業を拡大 ・窒化ガリウム（GaN）を用いたエネルギー効率の高い半導体の開発により、Cambridge GaN ...

2022 年 8 月にはさらなるイノベーションが進行中で、Toshiba Electronic Devices and Storage Corporationはスイッチング損失を低減した低オン抵抗の SiC MOSFET を開発しました。 北米地域のパワー半導体デバイス市場分析では、予測期間中に2%のCAGRで120億ドルの価値に ...

The DNA of tech® is a registered trademark of Vishay Intertechnology. IHPT is a trademark and Power Metal Strip, IHLE and ...

Meanwhile, silicon-based MOSFET and bipolar semiconductor devices remain competitive in many applications. Power devices continue to evolve rapidly as SiC and GaN technologies become more highly ...

Three innovative design techniques substantially enhance wireless transmitter performance and can boost power efficiency and elevate data rates concurrently. This effectively aligns with the growing ...

The power-supply tolerance is the output deviation ... helping to prevent system errors and protect electronic devices from damage. A timing diagram in Figure 2 shows how a reset output is ...

it can theoretically be applied to a wide range of electronic devices, promising record operating times. In fact, this innovation makes it possible to power an electronic device, even indoors ...